Microstructure and Mechanical Properties of DBC on Sputter Deposited Copper on Alumina Substrate


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The process of Direct Bonding Copper (DBC) is performed by a spinel reaction between CuO and Al2O3. In order to develop DBC on alumina substrate with high bonding strength, alumina substrate was preformed as follows: Cu was sputter-deposited on alumina substrate. Sputter-Deposited Cu (SDC) on alumina substrate was oxidized at 673K for 30min in air atmosphere and then stabilized at 1273K for 30min in N2 gas atmosphere to improve bonding strtrength between preformed alumina substrate and SDC layer. Subsequently, the Cu-foil (300µm) was bonded on preformed-alumina substrate in N2 gas atmosphere at 1342~1345K. It was found that optimum condition of DBC on preformed-alumina substrate could be successfully obtained at 1345K for 30min. Consequently, bonding strength of DBC on alumina substrate was the high value of 80N/cm. Observation and analysis of microstructure for Cu sputtered DBC showed that reaction compounds such as CuAlO2 and CuAl2O4 approved to be formed in the vicinity of interface between Cu and alumina substrate.



Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi




C. H. Lee et al., "Microstructure and Mechanical Properties of DBC on Sputter Deposited Copper on Alumina Substrate", Materials Science Forum, Vols. 449-452, pp. 677-680, 2004

Online since:

March 2004




[1] C. Beraud, M. Courbiere, C. Esnouf, D. Juve and D. Treheus., Study of Copper-Alumina Bonding,: J. Mater. Sci. 24 (1989), p.4545.

DOI: 10.1007/bf00544543

[2] J. R. Floyd., Effect of Composition and Crystal Size Alumina Ceramics on Metal-to-Ceramic Bonding Strength,: Am. Ceram. Soc. Bull., 42, (1963), p.65.

[3] J. T. Klomp., “Interfacial Reactions Between Metals and Oxides during Sealing": Am. Ceram. Soc. Bull., 59 (1989), p.794.

[4] Y. Yoshino., Role of Oxygen in Bonding Copper to Alumina,: J. Am. Ceram. Soc., 72 (1989), p.1322.

[5] T. E. O'brien, A. C. D. Chaklader., Effect of Oxygen on the Reaction between Copper and Sapphire,: J. Am. Ceram. Soc. 57, (1974), p.329.

[6] G. L. Bobcock, et al.: Method of Direct Bonding Metal to Non Metlalic Substrae(U. S. Pat. 3. 766, 634(1973).

[7] C. W. Seager, K. Kokini, et al., The Influence of CuAlO2 on the Strength of Eutectically Bonded Cu/Al2O3 Interface,: Scripta Materialia. 46, (2002), p.395 Cu2O voids (b) Cu2O chips (a) Cu2O voids (b) Cu2O voids (b) Cu2O chips (a) Cu2O chips (a).

DOI: 10.1016/s1359-6462(02)00012-x

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