Thermoelectric Properties of the Pseudogap Fe2VAl System

Abstract:

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While the Heusler-type Fe2VAl compound exhibits a semiconductor-like behavior in electrical resistivity, doping of quaternary elements causes a sharp decrease in the low-temperature resistivity ρ and a large enhancement in the Seebeck coefficient S. Substantial enhancement in S can be explained on the basis of the electronic structure where the Fermi level shifts slightly from the center of a pseudogap either up- or downward depending on doping. In particular, a slight substitution of Si for Al leads to a large power factor (P = S2/ρ) of 5.5×10-3 W/m K2 at around room temperature.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

909-912

DOI:

10.4028/www.scientific.net/MSF.449-452.909

Citation:

Y. Nishino "Thermoelectric Properties of the Pseudogap Fe2VAl System", Materials Science Forum, Vols. 449-452, pp. 909-912, 2004

Online since:

March 2004

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$35.00

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