Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs

Abstract:

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Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In both ohmic contacts, low-resistance and non-spiking planar interfaces were obtained by rapid thermal annealing. RF performance of the AlGaAs/GaAs HBT was also examined by employing these contact systems.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

921-924

DOI:

10.4028/www.scientific.net/MSF.449-452.921

Citation:

I. H. Kim "Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs", Materials Science Forum, Vols. 449-452, pp. 921-924, 2004

Online since:

March 2004

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