Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs
Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In both ohmic contacts, low-resistance and non-spiking planar interfaces were obtained by rapid thermal annealing. RF performance of the AlGaAs/GaAs HBT was also examined by employing these contact systems.
S.-G. Kang and T. Kobayashi
I. H. Kim, "Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs", Materials Science Forum, Vols. 449-452, pp. 921-924, 2004