Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs

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Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt ohmic contacts to n-type InGaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In both ohmic contacts, low-resistance and non-spiking planar interfaces were obtained by rapid thermal annealing. RF performance of the AlGaAs/GaAs HBT was also examined by employing these contact systems.

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Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

921-924

Citation:

I. H. Kim, "Comparison of Pd/Ge/Ti/Pt and Pd/Si/Ti/Pt Ohmic Contacts to N-Type InGaAs for AlGaAs/GaAs HBTs", Materials Science Forum, Vols. 449-452, pp. 921-924, 2004

Online since:

March 2004

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[1] I. -H. Kim, S.H. Park, T. -W. Lee and M. -P. Park: Appl. Phys. Lett. 71 (1997), p.1854.

[2] T.C. Shen, G.B. Gao and H. Morkoc: J. Vac. Sci. & Tech. B10 (1990), p.2113.

[3] J. Tsuchimoto, S. Shikata and H. Hayashi, J. Appl. Phys. 69 (1991), p.6556.

[4] E.D. Marshall, W.X. Chen, C.S. Wu, S.S. Lau and T.F. Keuch: Appl. Phys. Lett. 48 (1985), p.535.

[5] L.C. Wang, P.H. Hao, B.J. Wu: Appl. Phys. Lett. 67 (1995), p.509.

[6] M.W. Cole, W.Y. Han, L.M. Casas, K.A. Jones: J. Appl. Phys. 77 (1995), p.5225.

[7] S.N.G. Chu, A. Katz, T. Boone, P.M. Thomas, V.G. Riggs, W.C. Dautremont-Smith and W.D. Johnston, Jr.: J. Appl. Phys. 67 (1990), p.3754.

[8] S.H. Park, M. -P. Park, T. -W. Lee, K.M. Song, K.E. Pyun and H.M. Park: Proc. 22nd Intl. Symp. Compound Semiconductors (1995), p.295. Journal Title and Volume Number (to be inserted by the publisher).

[9] B.L. Sharma: Metal-Semiconductor Schottky Barrier Junctions and Their Applications (Plenum Press, New York and London, 1984), p.122.