Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator

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Polycrystalline ZnO thin films were for the first time deposited on SiO2/Si (100) substrate using 2-step deposition; atomic layer deposition (ALD) and RF magnetron sputtering, for Film Bulk Acoustic Resonator (FBAR) applications. The film deposition performed in this study was composed of following two procedures; the 1st deposition was using ALD method and 2nd deposition was using RF magnetron sputtering. The ZnO buffer layer ALD films were deposited using alternating diethylzinc (DEZn)/H2O exposures and ultrahigh purity argon gas for purging. Exposure time of 1 sec and purge time of 23 sec yielded an ALD cycle time. Two-step deposited ZnO films revealed stronger c-axis preferred-orientation than one-step deposited. Therefore, this method could be applied to the FBAR applications, since FBAR devices require high quality of thin films.

Info:

Periodical:

Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi

Pages:

977-980

DOI:

10.4028/www.scientific.net/MSF.449-452.977

Citation:

S.G. Kim et al., "Characteristics of ZnO Thin Film by Atomic Layer Deposition for Film Bulk Acoustic Resonator", Materials Science Forum, Vols. 449-452, pp. 977-980, 2004

Online since:

March 2004

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$35.00

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