Characteristics of SnO2 Thin Films Deposited by RF Magnetron Sputtering


Article Preview

SnO2 thin films were prepared on SiO2/Si substrate by RF-Magentron Sputtering method, varying the deposition time and Ar-to-O2 flow ratio. The post-annealing was conducted at 500 oC and 700 oC in Ar and O2 atmosphere, respectively. Film characteristics were very sensitive to the gas flow ratio during the deposition and the conditions of post-annealing. The Film thickness decreased with decreasing of Ar flow ratio at a constant amount (50 sccm) of total gas flow. Especially, the film deposited under Ar-O2 mixture gas (Ar-to-O2 ratio of 50%) showed clearly aggregated morphology of small particles (cauliflower) in a wide range of area. In the annealed films, these cauliflowers separated some small grains, decreasing the film thickness.



Materials Science Forum (Volumes 449-452)

Edited by:

S.-G. Kang and T. Kobayashi




H. W. Ryu et al., "Characteristics of SnO2 Thin Films Deposited by RF Magnetron Sputtering", Materials Science Forum, Vols. 449-452, pp. 993-996, 2004

Online since:

March 2004




[1] J. Bruneaux, H. Cachet, M. Froment, and A. Messad: Electrochemica Acta Vol. 39 (1994) 1251.

[2] S. C. Lee, J. H. Lee, and Y. H. Kim: Solar Energy Materials and Solar Cells Vol. 75 (2003) 481.

[3] W. M. Sears and M. A. Gee: Thin Solid Films Vol. 165 (1998) 265.

[4] M. C. Horrillo, P. Serrini, J. Santos and L. Manes: Sens. Actuators B, Vol. 45 (1997) 193.

[5] D. H Liu, Q. Wang, H. L. M. Chang and H. Chen: J. Mater. Res. Vol. 10 (1995) 1516.

[6] G. Sberveglieri, G. Faglia, S. Groppelli and P. Nelli: Transducers ’91 165.

[7] M. K. Tominaga, N. Ueshita, Y. Shintani and O. Tada: Jpn. J. Appl. Phys. Vol. 20 suppl. 3 (1981) 519.

[8] D. R. James: Optical thin films (SPIE, Washington, 1987) 28. 0 10 20 30 40 50 700 oC N2 500 oC N2 700 oC O2 500 o C O2 Diameter (nm) Annealing condition Ar: O2=100% Ar: O2=50% Ar: O2=0% As-dep.