Surface Density Analytical Model of Two-Dimensional Electron Gas in HEMT Structures


Article Preview



Materials Science Forum (Volumes 453-454)

Edited by:

Dragan P. Uskokovic, Slobodan K. Milonjic, Dejan I. Rakovic




R.M. Ramović and P.M. Lukić, "Surface Density Analytical Model of Two-Dimensional Electron Gas in HEMT Structures", Materials Science Forum, Vols. 453-454, pp. 27-32, 2004

Online since:

May 2004




[1] R. ŠašiM, D. NevizoviM, R. RamoviM, Influence of the Semiconductor Doping Level on the Carrier Surface Density in AlGaN/GaN MODFET Channel, Mat. Sci. Forum, 413: 39-44, (2003).

DOI: 10.4028/

[2] D. NevizoviM, R. ŠašiM & R. RamoviM, Sheet density of electronics in spacer layer of AlGaN/GaN MODFET: Calculating and analysing, IEEE Proc. 23rd International conference on microelectronics, Niš, Yugoslavia, 2: 475�478, (2002).

DOI: 10.1109/miel.2002.1003301

[3] S. Karmalkar, A unified equilibrium treatment of modulation doped heterojunctions and grossly asymmetric homojunctions, and its application to MODFET design, IEEE Transactions on Electron Devices, 45: 2187-2195, (1998).

DOI: 10.1109/16.725253

[4] S. Karmalkar & G. Ramesh, A simple yet comprehensive unified physical model of the 2D electron gas in delta-doped and uniformly, IEEE Trans. on Electron Devices, 47: 11-23, (2000).

DOI: 10.1109/16.817562

[5] D. Indjin, S. TomiM, Z. IkoniM, P. Harrison, R. W. Kelsall, V. MilanoviM, S. Kovcinac, “Gainmaximized GaAs/AlGaAs quantum cascade laser with digitally graded active region”, Appl Phys. Lett., 81: 2163-2165, (2002).

DOI: 10.1063/1.1508166

[6] Y. Zhang & J. Singh, “Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor, Journal of Applied Physics, 85: 587-594, (1999).

DOI: 10.1063/1.369493

[7] Z. I. Alferov, Nobel Lecture: “The Double Heterostructure Concept and its Applications in Physics, Electronics and Technology”, Reviews of Modern Physics, 73: 767-782, (2001).

DOI: 10.1103/revmodphys.73.767

Fetching data from Crossref.
This may take some time to load.