Structural Characterization and Luminescence of Ge/Si Quantum Dots

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 455-456)

Edited by:

Rodrigo Martins, Elvira Fortunator, Isabel Ferreira, Carlos Dias

Pages:

540-544

Citation:

A. Fonseca et al., "Structural Characterization and Luminescence of Ge/Si Quantum Dots", Materials Science Forum, Vols. 455-456, pp. 540-544, 2004

Online since:

May 2004

Export:

Price:

$38.00

[1] H. Presting, J. Konle, H. Kibbel and F. Banhart, Phys. E, 14 (1-2) (2002), p.249.

[2] D. Sequeira and N. Franco: Mat. Sci. Forum Vol. 378-381 (2001), p.206.

[3] N. Franco and A.D. Sequeira: Mat. Sci. Forum Vol. 378-381 (2001), p.212.

[4] N. Franco, S. Pereira and A. D. Sequeira: Absolute Scale Reciprocal Space Mapping on X-ray Diffractometers Incorporating a Position Sensitive Detector: Application to III-Nitride Semiconductors, Proceeedings of Materiais 2003. These Proceedings.

DOI: https://doi.org/10.4028/www.scientific.net/msf.455-456.132

[5] E.K. Meyer, G.P. Felcher, S.K. Sinha and I.K. Schuller: J. Appl. Phys, 52 (1981), p.6608.

[6] J. Stangl, A. Hesse, T. Roch, V. Holý, G. Bauer, T. Schuelli and T.H. Metzger: Nuc. Inst. Meth. Phys. Res. B, 200, (2003), p.11.

[7] G. Davis: Phys. Rep, 176 (1989), p.83.

[8] R. Sauer, in: Landolt-Börnstein, Bd. 22b, Springer, Berlin, 1989, p.338.

[9] P. Boucaud, S. Sauvage, M. Elkurdi, E. Mercier, T. Brunhes, V. Le Thanh and D. Bouchier: Phys. Rev. B, 64 (2001), p.155310.

[10] N.A. Sobolev, A. Fonseca, J.P. Leitão, M.C. Carmo, H. Presting and H. Kibbel: Phys. Stat. Sol. (c), 4 (2003), p.1267. Fig. 6. Level scheme used in the PL intensity vs. temperature fitting. b) a).

Fetching data from Crossref.
This may take some time to load.