P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1005-1008

DOI:

10.4028/www.scientific.net/MSF.457-460.1005

Citation:

G. Sarov et al., "P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching", Materials Science Forum, Vols. 457-460, pp. 1005-1008, 2004

Online since:

June 2004

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$35.00

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