Current Transport Mechanisms in 4H-SiC PiN Diodes

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1017-1020

Citation:

N. Camara et al., "Current Transport Mechanisms in 4H-SiC PiN Diodes", Materials Science Forum, Vols. 457-460, pp. 1017-1020, 2004

Online since:

June 2004

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[1] T. Kimoto, H. Matsunami: IEEE Trans. Electron Dev., Vol. 46, No. 3 (1999), p.119.

[2] A.M. Strel'chuk, N.S. Savkina: Mat. Sci. Eng. B., Vol 80/1-3 (2001), p.378.

[3] K.V. Vassilevski, A.V. Zorenko, K. Zekentes, K. Tsagaraki, E. Bano, C. Banc, A.A. Lebedev: Materials Science Forum Vols. 389-393, 1353 (2002).

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1353

[4] E. Bano, C. Banc, T. Ouisse: Sol. St. Electron., Vol 44(1), (2000), 63.

[5] T. Hatakeyama, T. Watanabe: Materials Science Forum Vols. 433-436 (2003) pp.443-446.

[6] A. Galeckas, J. Linnros: Materials Science Forum Vols. 353-356 (2001) pp.389-392.

[7] J.P. Bergman, H. Lendenmann: Materials Science Forum Vols. 353-356 (2001).