Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC


Article Preview



Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




Y. Ding et al., "Ballistic Electron Emission Microscopy Study of p-Type 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 1077-1080, 2004

Online since:

June 2004




[1] W.J. Kaiser and L.D. Bell, Phys. Rev. Lett. Vol. 60, 1406 (1988).

[2] L.D. Bell and W.J. Kaiser, Phys. Rev. Lett. Vol. 61, 2368 (1988).

[3] M.H. Hecht, L.D. Bell, W.J. Kaiser, and L.C. Davis, Phys. Rev. B Vol. 42, 7663 (1990).

[4] P. Käckel, B. Wenzien, and F. Bechstedt, Phys. Rev. B Vol. 50, 10761 (1994).

[5] W.R.L. Lambrecht, S. Limpijumnong, S.N. Rashkeev, and L.B. Segall, Phys. Stat. Sol. (b) Vol. 202, 5 (1997).

[6] C. Persson and U. Lindefelt, J. Appl. Phys. Vol. 82, 5496 (1997).

[7] H. -J. Im, B. Kaczer, J.P. Pelz, and W.J. Choyke, Appl. Phys. Lett. Vol. 72, 839 (1998); B. Kaczer, H. -J. Im, J.P. Pelz, J. Chen, and W.J. Choyke, Phys. Rev. B Vol. 57, 4027 (1998).

DOI: 10.1063/1.120910

[8] E.H. Rhoderick and R.H. Williams: Metal-Semiconductor Contacts (Oxford University Press, United Kindom, 1988).

[9] W.J. Choyke and R.P. Devaty, in The Handbook of Semiconductor Technology, v. 1, edited by K.A. Jackson and W. Schroter (Wiley-Vch, Germany, 2000).

[10] B.J. Skromme, K. Palle, C. D. Poweleit, L.R. Bryant, W.M. Vetter, M. Dudley, K. Moore, and T. Gehoski, Mater. Sci. Forum Vol. 389-393, 455 (2002).

DOI: 10.4028/

[11] C. -Y. Wu, J. Appl. Phys. Vol. 51(7), 3786 (1980).

[12] H.K. Henisch: Rectifying Semiconductor Contacts (Clarendon, Oxford, 1957).

[13] M. Kleefstra and G.C. Herman, J. Appl. Phys. Vol. 51, 4923 (1980).

[14] B.J. Skromme, E. Luckowski, K. Moore, S. Clemens, D. Resnick, T. Gehoski, and D. Ganser, Mater. Sci. Forum, Vol. 338-342, 1029, (2000).

DOI: 10.4028/

Fetching data from Crossref.
This may take some time to load.