Bulk SiC Devices for High Radiation Environments


Article Preview



Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




W. Cunningham et al., "Bulk SiC Devices for High Radiation Environments", Materials Science Forum, Vols. 457-460, pp. 1093-1096, 2004

Online since:

June 2004




[1] B. J. Baliga, Power Semiconductor Devices for Variable Frequency Drives, Proceedings of the IEEE, 82, (1994), 1112.

[2] R. J. Trew, J. -B. Yan, and P. M. Mock, The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter Wave Power Applications, Proceedings of the IEEE, 79, 598, (1991).

DOI: https://doi.org/10.1109/5.90128

[3] C. E. Weitzel, J. W. Palmour, C. H. Carter Jr., K. Moore, K. J. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, Silicon Carbide High Power Devices, IEEE Transactions on Electron Devices, 43, 1732, (1996).

DOI: https://doi.org/10.1109/16.536819

[4] M. Bruzzi, F. Nava, S. Russo, S. Sciortino, P. Vanni, Diam. Relat. Mater. 10 (2001) 657- 661.

[5] Physics of Semiconductor devices, S. M. Sze, Wiley-Interscience, New York, (1981).

[6] Comparison of bulk and epitaxial 4-H SiC for radiation hard particle tracking, T. Quin et al., to be presented at IEEE (2003).