4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




J. H. Zhao et al., "4,340V, 40 mΩcm2 Normally-Off 4H-SiC VJFET", Materials Science Forum, Vols. 457-460, pp. 1161-1164, 2004

Online since:

June 2004




[1] J. H. Zhao, U.S. Patent 6, 107649.

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[3] P. Friedrichs, H. Mitlehner, R. Schörner, K. -O. Dohnke, R. Elpelt, and D. Stephani: Mater. Sci. Forum, Vol. 389-393 (2002), pp.1185-1190.

DOI: https://doi.org/10.4028/www.scientific.net/msf.389-393.1185

[4] K. Asano, Y. Sugawara, T. Hayashi, S. Ryu, R. Singh, J. Palmour, and D. Takayama: Proc. ISPSD (2002), pp.61-64.

[5] Onose, H., Watanabe, A., Someya, T., and Kobayashi, Y.: Mater. Sci. Forum, Vol. 389-393 (2002), pp.1227-1230.

[6] DESSIS-ISE User Manual, ISE International 1999. Fig. 9 I-V characteristics of a small 4H-SiC VJFET with a medium LJFET opening.

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