Paper Title:
High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
  Abstract

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Periodical
Materials Science Forum (Volumes 457-460)
Edited by
Roland Madar, Jean Camassel and Elisabeth Blanquet
Pages
1209-1212
DOI
10.4028/www.scientific.net/MSF.457-460.1209
Citation
W. Liu, C. M. Zetterling, M. Östling, J. Eriksson, N. Rorsman, H. Zirath, "High Frequency Measurements and Simulations of SiC MESFETs up to 250°C", Materials Science Forum, Vols. 457-460, pp. 1209-1212, 2004
Online since
June 2004
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