High Frequency Measurements and Simulations of SiC MESFETs up to 250°C

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1209-1212

DOI:

10.4028/www.scientific.net/MSF.457-460.1209

Citation:

W. Liu et al., "High Frequency Measurements and Simulations of SiC MESFETs up to 250°C", Materials Science Forum, Vols. 457-460, pp. 1209-1212, 2004

Online since:

June 2004

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$35.00

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