High Frequency Measurements and Simulations of SiC MESFETs up to 250°C


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




W. Liu et al., "High Frequency Measurements and Simulations of SiC MESFETs up to 250°C", Materials Science Forum, Vols. 457-460, pp. 1209-1212, 2004

Online since:

June 2004




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