Recent Advances in (0001) 4H-SiC MOS Device Technology

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1275-1280

Citation:

M. K. Das "Recent Advances in (0001) 4H-SiC MOS Device Technology", Materials Science Forum, Vols. 457-460, pp. 1275-1280, 2004

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June 2004

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