Recent Advances in (0001) 4H-SiC MOS Device Technology


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




M. K. Das, "Recent Advances in (0001) 4H-SiC MOS Device Technology", Materials Science Forum, Vols. 457-460, pp. 1275-1280, 2004

Online since:

June 2004





[1] J.W. Sanders, Master's Thesis, Purdue University, (1994).

[2] J.N. Shenoy, G. L Chindalore, M.R. Melloch, J.A. Cooper, Jr., J.W. Palmour, and K.G. Irvine: J. Electron. Mater. Vol. 24 (1995), p.303.

[3] L.A. Lipkin and J.W. Palmour: J. Electron. Mater. Vol. 24 (1996), p.909.

[4] V.V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz: Phys. Stat. Sol. (a) Vol. 162 (1997), p.321.

[5] M.K. Das, B.S. Um, and J.A. Cooper, Jr.: Matl. Sci. Forum Vols 338-342 (1999) p.1069.

[6] N.S. Saks, S.S. Mani, and A.K. Agarwal: Appl. Phys. Lett. Vol. 76 (2000), p.2250.

[7] H. Li, S. Dimitrijev, H.B. Harrison, and D. Sweatman, Appl. Phys. Lett. Vol. 70 (1997), p. (2028).

[8] G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, M. Di Ventra, S.T. Pantelides, L.C. Feldman, and R.A. Weller: Appl. Phys. Lett. Vol. 76 (2000), p.1713.

[9] L.A. Lipkin, M.K. Das, and J.W. Palmour: Matl. Sci. Forum Vols. 389-393 (2002), p.985.

[10] E.H. Nicollian and J.R. Brews, MOS Physics and Technology, New York : John Wiley & Sons (1982).

[11] E.H. Nicollian and A. Goetzberger, Bell Syst. Tech. J., Vol. 46 (1967), p.1055.

[12] W. Fahrner and A. Goetzberger, Appl. Phys. Lett., Vol. 17 (1970) p.16.