A P-Channel MOSFET on 4H-SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1401-1404

Citation:

J. S. Han et al., "A P-Channel MOSFET on 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 1401-1404, 2004

Online since:

June 2004

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