Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1457-1462

DOI:

10.4028/www.scientific.net/MSF.457-460.1457

Citation:

H. J. von Bardeleben et al., "Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC ", Materials Science Forum, Vols. 457-460, pp. 1457-1462, 2004

Online since:

June 2004

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$35.00

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