Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




H. J. von Bardeleben et al., "Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC ", Materials Science Forum, Vols. 457-460, pp. 1457-1462, 2004

Online since:

June 2004




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DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.495

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