Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1537-1540

Citation:

B. M. Epelbaum et al., "Sublimation Growth of Bulk AlN Crystals: Process Temperature and Growth Rate", Materials Science Forum, Vols. 457-460, pp. 1537-1540, 2004

Online since:

June 2004

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[1] R. Gaska, C. Chen, J. Yang et. al., Applied Physics Letters 81/24 (2002), p.4658.

[2] X. Hu, J. Deng, N. Pala, R. Gaska et. al., Applied Physics Letters 82/8 (2003), p.1299.

[3] B. Raghothamachar, M Dudley, J.C. Rojo et. al., J. Cryst. Growth 250 (2003), p.244.

[4] G.A. Slack, T.F. McNelly, J. Cryst. Growth 34 (1976), p.263.

[5] S. Yu. Karpov, Yu. N. Makarov, M. S. Ramm, MRS Int J. Nitride Semicond. Res. 2, 45(1997).

[6] B. Epelbaum, D. Hofmann, M. Bickermann, A. Winnacker, Mat. Sci. Forum 389 (2002), p.1445.

[7] L. Liu, B. Liu, Y. Shi and J.H. Edgar, MRS Internet J. Nitride Semicond. Res. 6, 7 (2001).

[8] Yu. M. Tairov, V.F. Tsvetkov, J. Cryst. Growth 43 (1978), p.209.

[9] P.M. Dryburgh, J. Cryst. Growth 125 (1991), p.65.

[10] M. Hoch and D. Ramakrishnan, J. Electrochem. Soc. 118, (1971) 1204 Fig. 3. Growth rate dependence on temperature for Psys= 300, 500 and 900 mbar.