Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1557-1560

DOI:

10.4028/www.scientific.net/MSF.457-460.1557

Citation:

N. Gogneau et al., "Growth of GaN/AlN Quantum Dots on SiC (000-1) by Plasma-Assisted MBE", Materials Science Forum, Vols. 457-460, pp. 1557-1560, 2004

Online since:

June 2004

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