Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

157-162

DOI:

10.4028/www.scientific.net/MSF.457-460.157

Citation:

X. Huang et al., "Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques", Materials Science Forum, Vols. 457-460, pp. 157-162, 2004

Online since:

June 2004

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$35.00

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