Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

157-162

Citation:

X. Huang et al., "Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques", Materials Science Forum, Vols. 457-460, pp. 157-162, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] D.K. Bowen and B.K. Tanner: High Resolution X-ray Diffractometry and Topography (Taylor & Francis, London 1998).

[2] S.A. Stepanov, E.A. Kondrashkina, R. Köhler, D.V. Novikov, G. Materlik and S.M. Durbin: Phys. Rev. B Vol. 57 (1995), p.4829.

[3] R.R. Hess, C.D. Moore, and M. S. Goorsky: J. Phys. D: Appl. Phys. Vol. 32 (1999), p. A16.

[4] M. Dudley and X. Huang: in Encyclopedia of Materials: Science and Technology (Elsevier, New York 2001), p.9813.

[5] N. Loxley, B.K. Tanner and D.K. Bowen: J. Appl. Cryst. Vol. 28 (1995), p.314.

[6] X.R. Huang, M. Dudley, W.M. Vetter, W. Huang, S. Wang, C.H. Carter, Jr.: Appl. Phys. Lett. Vol. 74 (1999), p.353.

[7] P.G. Neudeck, J.A. Powell, A.J. Trunek, X.R. Huang and M. Dudley: Mater. Sci. Forum Vol. 389-393 (2002), p.311.

[8] J. A. Powell, P. G. Neudeck, A. J. Trunek, G. M. Beheim, L. G. Matus, R. W. Hoffman, Jr. and L. J. Keys: Appl. Phys. Lett. Vol. 77 (2000), p.1449.

[9] M. Dudley, W.M. Vetter and P.G. Neudeck: J. Cryst. Growth Vol. 240 (2002), p.22.

[10] R.S. Okojie, T. Holzheu, X. Huang and M. Dudley: Appl. Phys. Lett. Vol. 83 (2003), p. (1971).

[11] H. Nagai: J. Appl. Phys. Vol. 45 (2003), p.3789.

Fetching data from Crossref.
This may take some time to load.