Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

1597-1600

DOI:

10.4028/www.scientific.net/MSF.457-460.1597

Citation:

J. K. Jeong et al., "Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition", Materials Science Forum, Vols. 457-460, pp. 1597-1600, 2004

Online since:

June 2004

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$35.00

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