Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




B.J. Skromme et al., "Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults", Materials Science Forum, Vols. 457-460, pp. 1613-1616, 2004

Online since:

June 2004




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