Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

185-188

DOI:

10.4028/www.scientific.net/MSF.457-460.185

Citation:

C. H. Li et al., "Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask", Materials Science Forum, Vols. 457-460, pp. 185-188, 2004

Online since:

June 2004

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$35.00

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