Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

193-196

DOI:

10.4028/www.scientific.net/MSF.457-460.193

Citation:

C. Hallin et al., "Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD", Materials Science Forum, Vols. 457-460, pp. 193-196, 2004

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June 2004

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