Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




C. Hallin et al., "Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD", Materials Science Forum, Vols. 457-460, pp. 193-196, 2004

Online since:

June 2004




[1] N. Koruda, K. Shibahara, W.S. Yoo, S. Nishino, and H. Matsunami: Extended abstracts of the 19th Conf. on Solid State Devices and Materials, Tokyo, 1987, Ed. S. Furukawa ( Business Center for Academic Societies, Tokyo, 1987), p.227.

[2] T. Kimoto, A. Itoh, and H. Matsunami: Phys. Stat. Sol. (b) Vol. 202 (1997), p.247.

[3] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.A. Nilsson, J.P. Bergman, and P. Skytt: Mater. Sci. Forum Vol. 353-356 (2001), p.727.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.727

[4] C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A. Konstantinov, O. Kordina, and E. Janzén: J. Crystal Growth 181 (1997) pp.241-253.

DOI: https://doi.org/10.1016/s0022-0248(97)00247-9

[5] J. Takahashi, M. Kanaya, and Y. Fujiwara: J. Crystal Growth 135 (1994) pp.61-70.

[6] T. Kimoto and H. Matsunami: J. Appl. Phys. 78 (1995) pp.3132-3137.