Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

225-228

Citation:

S. Harada et al., "Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation", Materials Science Forum, Vols. 457-460, pp. 225-228, 2004

Online since:

June 2004

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