Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

237-240

DOI:

10.4028/www.scientific.net/MSF.457-460.237

Citation:

C. Blanc et al., "Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates", Materials Science Forum, Vols. 457-460, pp. 237-240, 2004

Online since:

June 2004

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$35.00

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