Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

265-268

DOI:

10.4028/www.scientific.net/MSF.457-460.265

Citation:

T. Chassagne et al., "Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates ", Materials Science Forum, Vols. 457-460, pp. 265-268, 2004

Online since:

June 2004

Export:

Price:

$35.00

[1] T. Chassagne, G. Ferro, C. Gourbeyre, M. Le Berre, D. Barbier and Y. Monteil, Materials Science Forum, vols. 353-356 (2001) 155-158.

DOI: 10.4028/www.scientific.net/msf.353-356.155

[2] T. Chassagne, G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil and J. Bouix, Thin Solid Films 402 (2002) 83-89.

DOI: 10.1016/s0040-6090(01)01597-8

[3] C. Jacob, P. Pirouz and S. Nishino, Materials Science Forum Vols 353-356 (2001).

In order to see related information, you need to Login.