Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

273-276

Citation:

T. Chassagne et al., "Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls" ", Materials Science Forum, Vols. 457-460, pp. 273-276, 2004

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June 2004

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DOI: https://doi.org/10.4028/www.scientific.net/msf.433-436.115

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