Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

339-342

Citation:

M. Weisser et al., "Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction", Materials Science Forum, Vols. 457-460, pp. 339-342, 2004

Online since:

June 2004

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[1] B. Hamelin, P. Bastie: developpements recents , Journal de Physique. Colloques Vol. 8 (1998) pp. Pr5/3-Pr5/8.

DOI: https://doi.org/10.1051/jp4:1998501

[2] M. Weisser, D. Schmidt, P. Schmitt, M. Magerl, to be published.

[3] T.L. Straubinger, M. Bickermann, R. Weingartner, P.J. Wellmann, A. Winnacker: Journal of Crystal Growth, Apr (2002).

[4] M. Weisser, PhD. Thesis at the University of Erlangen-Nürnberg, to be submitted.

[5] LAMP by D. Richard, M. Ferrand, G. J. Kearley, http: /www. ill. fr/data_treat/lamp/front. html.

[6] R.C. Glass, L.O. Kjellberg, V.F. Tsvetkov, J.E. Sundgren, E. Janzen: Journal of Crystal Growth Vol. 132 iss. 3-4, p.504 Fig. 6 Detector images of several positions on the SiC-waver Fig. 7 Detector image of the 006 reflection.

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