Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

355-358

Citation:

H. Idrissi et al., "Study of Dislocation Mobility in 4H SiC by X-Ray Transmission Topography, Chemical Etching and Transmission Electron Microscopy", Materials Science Forum, Vols. 457-460, pp. 355-358, 2004

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June 2004

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DOI: https://doi.org/10.1002/chin.197139009

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