TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




M. Zhang et al., "TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes", Materials Science Forum, Vols. 457-460, pp. 359-362, 2004

Online since:

June 2004




[1] P. G. Neudeck, R. S. Okojie, and L. -Y. Chen, Proc. IEEE 90 (2002), p.1065.

[2] R. Singh, J. A. Cooper, M. R. Melloch, T. P. Chow, and J. W. Palmour, IEEE Trans Electron Dev 49 (2002), p.665.

[3] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P. Å. Nilsson, J. P. Bergman, and P. Skytt, Materials Science Forum 353-356 (2001), p.727.

DOI: 10.4028/www.scientific.net/msf.353-356.727

[4] J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt, and P. Skytt, Materials Science Forum 353-356 (2001), p.299.

DOI: 10.4028/www.scientific.net/msf.353-356.299

[5] M. Skowronski, J. Q. Liu, W. M. Vetter, M. Dudley, C. Hallin, and H. Lendenmann, J. Appl. Phys. 92 (2002), 4699.

[6] P. O. Persson, L. Hultman, H. Jacobson, J. P. Bergman, E. Janzén, J. M. Molina-Aldareguia, W. J. Clegg, and T. Tuomi, Appl. Phys. Lett. 80 (2002), p.4852.

DOI: 10.1063/1.1487904

[7] A. O. Konstantinov and H. Bleichner, Appl. Phys. Lett. 71 (1997), p.3700.

[8] A. Galeckas, J. Linnros, B. Breitholtz, and H. Bleichner, J. Appl. Phys. 90 (2001), p.980.

[9] A. Galeckas, J. Linnros, and P. Pirouz, Appl. Phys. Lett. 81 (2002), p.883.

[10] R. E. Stahlbush, J. B. Fedison, S. D. Arthur, L. B. Rowland, J. W. Kretchmer, and S. Wang, Materials Science Forum, 389-393 (2001), p.427.

[11] S. G. Sridhara, F. H. C. Carlsson, J. P. Bergman, and E. Janzén, Appl. Phys. Lett. 79 (2001), p.3944.

[12] J. Q. Liu, M. Skowronski, C. Hallin, R. Söderholm, and H. Lendenmann, Appl. Phys. Lett. 80 (2002), p.749.

[13] M. E. Twigg, R. E. Stahlbush, M. Fatemi, S. D. Arthur, J. B. Fedison, J. B. Tucker, and S. Wang, Appl. Phys. Lett. 82 (2003), p.2410.

[14] K. Maeda and S. Takeuchi, Enhancement of Dislocation Mobility in Semiconducting Crystals by Electronic Excitation, in Dislocation in Solids, Vol. 10, ed. F. R. N. Nabarro and M. S. Duesbery (North-Holland Publishing Co.: Amsterdam, 1996), pp.443-504.

DOI: 10.1016/s1572-4859(96)80009-x

[15] P. Pirouz and J. W. Yang, Ultramicroscopy 51 (1993), p.189.

[16] J. P. Morniroli, Large-Angle Convergent-Beam Electron Diffraction (LACBED): Application to Crystal Defects, (Monograph of the French Society of Microscopy: Paris, 2002).

DOI: 10.1201/9781420034073.ch6

[17] X. J. Ning and P. Pirouz, J. Mater. Res. 11 (1996), 884.

[18] X. J. Ning, N. Huvey, and P. Pirouz, J. Am. Ceram. Soc. 80 (1997), p.1645.

[19] C. T. Chou, A. R. Preston, and J. W. Steeds, Philos. Mag. A 65 (1992), 863.

[20] H. Alexander, P. Haasen, R. Labusch, and W. Schröter, J. Phys. (Paris) 40, Colloque C6 (1979).

[21] P. Pirouz, J. L. Demenet, and M. H. Hong, Phil. Mag. A 81 (2001), p.1207.

[22] J. W. Yang, X. J. Ning, and P. Pirouz, Dislocations in SiC and their Recombination-Enhanced Motion, in Japan-US Workshop on Functional Fronts in Advanced Ceramics, ed. K. Yanagida and R. Newnham (Ceramic Society of Japan: Tsukuba, Japan, 1994), pp.55-58.

[23] K. Maeda, K. Suzuki, and M. Ichihara, Microsc. Microanal. Microstruct. 4, 211 (1993).

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