Photoluminescence Mapping of a SiC Wafer in Device Processing


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




M. Tajima et al., "Photoluminescence Mapping of a SiC Wafer in Device Processing", Materials Science Forum, Vols. 457-460, pp. 569-572, 2004

Online since:

June 2004




[1] M. Tajima, Z. Q. Li and R. Shimidzu: Jpn. J. Appl. Phys. Vol. 41 (2002), p. L1505.

[2] W. J. Choyke and L. Patrick: Silicon Carbide - 1973, eds. R. C. Marshall et al. (Univ. South Carolina Press, 1974), p.261.

[3] M. Ikeda, H. Matsunami and T. Tanaka: Phys. Rev. Vol. B22 (1980), p.2842.

[4] A. Ellison, B. Magnusson, C. Hemmingsson, W. Magnusson, T. Iakimov, L. Storasta, A. Henry, N. Henelius and E. Janzén: Mater. Res. Soc. Symp. Vol. 640 (2001), H1. 2.

DOI: 10.1557/proc-640-h1.2

[5] S. Nakashima, Y. Nakatake, H. Harima, M. Katsuno and N. Ohtani: Appl. Phys. Lett. Vol. 77 (2000) p.3612 Fig. 5. One-dimensional Raman imaging across the defect indicated by an arrow in Fig. 4 (b).

DOI: 10.1063/1.1329629

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