Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering


Article Preview



Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




E. Kurimoto et al., "Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering", Materials Science Forum, Vols. 457-460, pp. 621-624, 2004

Online since:

June 2004




[1] H. Yano, T. Hirao, T. Kimoto, and H. Matsunami, Jpn.J. Appl. Phys. Vol. 39 (2000), p.2008.

[2] T. Hirao, H. Yano, T. Kimoto, H. Matsunami and H. Shiomi, Mat. Sci. Forum 389-393 (2002), p.1065.


[3] R. Schoerner, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electron Devices Lett. Vol. 20 (1999), p.241.

[4] V.V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, phys. stat. sol. (a) Vol. 162 (1997), p.321.

[5] N. Schulze, D. Barrett, and G. Pensl, phys. stat. sol. (a) Vol. 178 (2000), p.645.

[6] EMIS Data Review Series, No. 13, Properties of Silicon Carbide, Ed. G.L. Harris (INSPEC, London, 1995).

[7] G.A. Lomakina and Yu.A. Vodakov, Sov. Phys. Solid State Vol. 15 (1973), p.83.

[8] M. Schadt, G. Pensl, R.P. Devaty, W.J. Choyke, R. Stein, and D. Stephani, Appl. Phys. Lett. Vol. 65 (1994), p.3120.

[9] S. Nakashima and H. Harima, Phys. Stat. Sol. (a) Vol. 162 39 (1997).

[10] H. Harima, S. Nakashima and T. Uemura, J. Appl. Phys. Vol. 78(1995), p. (1996).

[11] A.N. Pikhtin, V.T. Prkopenko, V.S. Rondarev, and A.D. Yaskov, Opt. Spectrosc. Vol. 43, (1977), p.420.