Impurity Conduction Observed in Al-Doped 6H-SiC

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

685-688

Citation:

M. Krieger et al., "Impurity Conduction Observed in Al-Doped 6H-SiC", Materials Science Forum, Vols. 457-460, pp. 685-688, 2004

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June 2004

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[1] G. Busch, H. Labhart: Helv. phys. acta Vol. 14 (1946), p.463.

[2] N. Schulze, D. L. Barrett, G. Pensl: Appl. Phys. Lett. Vol. 72 (1998), p.1632.

[3] N. Schulze, J. Gajowski, K. Semmelroth, M. Laube, G. Pensl: Mater. Sci. Forum Vol. 353-356 (2001), p.45.

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.45

[4] J. L. Pautrat, J. L. Katircioglu, N. Magnea, D. Bensahel, J. C. Pfister, L. Revoil: Solid State Electron. Vol. 23 (1980), p.1159.

DOI: https://doi.org/10.1016/0038-1101(80)90028-3

[5] T. W. Hickmott: Phys. Rev. B Vol. 44 (1991), p.13487.

[6] A. O. Evwaraye, S. R. Smith, W. C. Mitchel, M. D. Roth: Appl. Phys. Lett Vol. 68 (1996), p.3159.

[7] N. F. Mott, W. D. Twose: Adv. Physics Vol. 10 (1961), p.107.

[8] G. Pensl, F. Ciobanu, M. Krieger, M. Laube, S. Reshanov, F. Schmid, G. Wagner, H. Nagasawa, A. Schöner: Mat. Res. Soc. Symp. Proc. Vol. 742 (2003), p.163.

[9] B. I. Shklovskii, A. L. Efros: Electronic Properties of Doped Semiconductors, Springer Series in Solid-State Sciences Vol. 45 (1984).

DOI: https://doi.org/10.1007/978-3-662-02403-4_2

[10] D. Emin: Phil. Mag. Vol. 35 (1977), p.1189.

[11] M. Grünewald, P. Thomas, D. Würtz: J. Phys. C Vol. 14 (1981), p.4083.

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