Free Growth of 4H-SiC by Sublimation Method

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

71-74

Citation:

J. M. Dedulle et al., "Free Growth of 4H-SiC by Sublimation Method", Materials Science Forum, Vols. 457-460, pp. 71-74, 2004

Online since:

June 2004

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[1] M. Pons, M. Anikin, K. Chourou, J.M. Dedulle, R. Madar et al., Mat. Sci. and Eng., B61-62, (1999), p.18.

[2] M. V. Bogdanov, S. E. Demina, S. Yu Karpov, A. V. Kulik, M.S. Ramm, Yu. N. Makarov, Cryst. Res. Technol. 38 n° 3-5, (2003), p.237.

[3] R. -H. Ma, H. Zhang, S. Ha, M. Skowronski, J. Crystal Growth, 252, (2003), p.523.

[4] K. Böttcher, D. Schulz, J. Crystal Growth, 237-239, (2002), p.1196.

[5] R. Ma, H. Zhang, V. Prasad, M. Duddley, Crystal growth and Design, Vol. 2 n°3, (2002), p.213.

[6] M. V. Bogdanov, S. E. Demina, S. Yu Karpov, A. V. Kulik and al., Mat. Res. Soc. Symp. Proc., Vol. 742, (2003), K1. 3. 1.

[7] S. Nishizawa, T. Kato, Y. Kitou, N. Oyanagi, K. Arai, Mater. Sci. Forum, Vol. 389-393, (2002), p.43.

[8] C. Moulin, M. Pons, A. Pish, P. Grosse,C. Faure, A. Basset, G. Basset, A. Pasero, T. Billon, B. Pelissier, M. Anikin, E. Pernot, P. Pernot-Rejmankova, R. Madar, Mater. Sci. Forum, Vol. 353-356, (2001).

DOI: https://doi.org/10.4028/www.scientific.net/msf.353-356.7