Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

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Materials Science Forum (Volumes 457-460)

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Roland Madar, Jean Camassel and Elisabeth Blanquet

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735-738

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C. Jacquier et al., "Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt ", Materials Science Forum, Vols. 457-460, pp. 735-738, 2004

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June 2004

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