Non-Contact Doping Profiling in Epitaxial SiC

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Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

755-758

Citation:

A. Savtchouk et al., "Non-Contact Doping Profiling in Epitaxial SiC", Materials Science Forum, Vols. 457-460, pp. 755-758, 2004

Online since:

June 2004

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$38.00

[1] J. Lagowski and P. Edelman, and M. Wilson, U.S. Patent 6, 037, 797.

[2] Yu. Goldberg et al, in Properties of Advanced Semiconductor Materials, Ed. M. Levinshtein, S.L. Rumyanstev and M.S. Shur, J. Wiley and Sons, Inc., (2001), p.94.

[3] D.K. Schroder: Semiconductor Material and Device Characterization, 2nd ed, J. Wiley & Sons, (1998), p.278.

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