Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

759-762

Citation:

M. Zhang et al., "Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates", Materials Science Forum, Vols. 457-460, pp. 759-762, 2004

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June 2004

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