Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates


Article Preview



Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




M. Zhang et al., "Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates", Materials Science Forum, Vols. 457-460, pp. 759-762, 2004

Online since:

June 2004




[1] H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P. Å. Nilsson, J. P. Bergman, and P. Skytt: Materials Science Forum 353-356 (2001) p.727.

DOI: 10.4028/

[2] J. P. Bergman, H. Lendenmann, P. Å. Nilsson, U. Lindefelt, and P. Skytt: Materials Science Forum 353- 356, (2001) p.299.

DOI: 10.4028/

[3] A. Galeckas, J. Linnros, and P. Pirouz: Appl. Phys. Lett. 81(5) (2002), 883.

[4] B. J. Skromme, K. Palle, C D. Powelet, L. R. Bryant, W. M. Vetter, M. Dudley, K. Moore, and T. Gehoski, Materials Science Forum 389-393 (2002) p.455.

DOI: 10.4028/

[5] J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. Skowronski: Appl. Phys. Lett. 80(12) (2002), 2111.

[6] Robert S. Okojie, Ming Zhang, Pirouz Pirouz, Sergey Tumakha, Gregg Jessen, and Leonard J. Brillson: Appl. Phys. Lett., 79 (2001), p.3056.

DOI: 10.1063/1.1415347

[7] H. Iwata, U. Lindefelt, S. Öberg, and P. R. Briddon, Materials Science Forum 539-593, (2001) p.529.

[8] M. S. Miao, S. Limpijumnong, and W. R. L. Lambrecht: Appl. Phys. Lett. 79(26) (2001), 4360.

[9] T. A. Kuhr, J. Liu, H. J. Chung, M. Skowronski, and F. Szmulowicz: J. Appl. Phys. 92(10), (2002), 5863.

Fetching data from Crossref.
This may take some time to load.