Electro-Chemical Mechanical Polishing of Silicon Carbide

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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

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801-804

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C. H. Li et al., "Electro-Chemical Mechanical Polishing of Silicon Carbide", Materials Science Forum, Vols. 457-460, pp. 801-804, 2004

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June 2004

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[1] J. Powell, D. J. Larkin, and P. B. Abel: J. Electron. Mater., 24, (1995) p.295.

[2] W. C. Mitchel, J. Brown, D. Buchanan, R. Bertke, K. Mahalingham, F.D. Orazio, Jr,. P. Pirouz, H. -J.R. Tseng, U.B. Ramabadran, and B. Roughani: Mater. Sci. Forum 338-342, (2000) p.841.

DOI: https://doi.org/10.4028/www.scientific.net/msf.338-342.841

[3] S. Johansson, J. -A. Schweitz, and K. P.D. Lagerlog: J. Am. Ceram. Soc. 72, (1989) p.1136.

[4] W. Qian, M. Skowronski, G. Augustine, R. C. Glass, H. McD. Hobgood, and R. H. Hopkins: J. Electrochem. Soc. 142, (1995) p.4290.

[5] L. Zhou, V. Audurier, P. Pirouz, and J. A. Powell: J. Electrochem. Soc. 144, (1997) L161.

[6] M. Kikuchi, Y. Takahashi, T. Suga, S. Suzuki, and Y. Bando: J. Am. Ceram. Soc. 75, (1982) p.189.

[7] F. Owman, C. Hallin, P. Martensson, and E. Janzen: J. Cryst. Growth 167, (1996) p.391.

[8] S. E. Saddow, T. E. Schattner, J. Brown, L. Grazulis, k. Mahalingram, G. Landis, R. Bertke, and W.C. Mitchel: J. Electron. Mater. 30, (2001) p.228.

[9] S. Ha, N. T. Nuhfer, M. DeGraef, G. S. Rohrer, and M. Skowronski: Mater. Sci. Forum 338-442, (2000) p.477.

[10] E.I. Radovanova: Semiconductors 30 (1996)527. 0. 1 1 10 0 5 10 15 20 25 5 seconds 30 seconds 0. 1µm diamond polish As received wafer Anodization Current (mA) RMS Roughness (nm) Fig. 5 RMS roughnesses as a function of anodization current.