Etching of SiC with Fluorine ECR Plasma


Article Preview



Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




C. Förster et al., "Etching of SiC with Fluorine ECR Plasma", Materials Science Forum, Vols. 457-460, pp. 821-824, 2004

Online since:

June 2004




[1] Y.T. Yang, K.L. Ekinci, X.M.H. Huang, L.M. Schiavone, M.L. Roukes, C.A. Zormann and M. Mehrgany: Appl. Phys. Let. Vol. 78 (2001), p.162.

[2] T.L. Chu and R.B. Campbell: J. Electrochem. Soc. Vol. 112 (1965), p.955.

[3] Z.Y. Xie, C.H. Wei, L.Y. Li, Q.M. Yu and J.H. Edgar: J. Cryst. Growth Vol. 217 (2000), p.115.

[4] M.I. Karklina and D.T. Sandbekov: Neorg. Mater. Vol. 8 (1972), p.378.

[5] J.S. Shor and R.M. Osgood, Jr.: J. Electrochem. Soc. Vol. 140 (1993), P. L123.

[6] G.L. Harris, K. Fekade and K. Wongchotigul: J. Mater. Sci.: Mater. Electron. Vol. 3 (1992), p.162.

[7] P.H. Yih, V. Saxena and A.J. Steckl: phys. stat. sol., Vol. B202 (1997), p.605.

[8] K. Suzuki, S. Okudaira, N. Sakudo and I. Kanomata, Jpn. J. Appl. Phys. Vol. 16 (1977), p. (1979).

[9] A.H. Al-Bayati, K.G. Orrman-Rossiter, R. Badheka and D.G. Armour: Surf. Sci. Vol. 237 (1990), p.213.

[10] W. Choi, C. Kim and H. Kang: Surf. Sci. Vol. 281 (1993), p.323 Fig. 7. SEM picture of a SiC/Si layer structure after ECR etching Fig. 6. AES measurement of 3C-SiC sample etched in case of SF6.