Structural Defects Formed in Al-Implanted and Annealed 4H-SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet

Pages:

889-892

Citation:

K. A. Jones et al., "Structural Defects Formed in Al-Implanted and Annealed 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 889-892, 2004

Online since:

June 2004

Export:

Price:

$38.00

[1] J.M. Bluet, J. Pernot, J. Camassei, S. Contreras, J.L. Robert, J.F. Michael, and T. Billon, J. Appl. Phys. 88, 1971 (2000).

[2] K.A. Jones, M.A. Derenge, M.H. Ervin, P.B. Shah, J.A. Freitas, R.D. Vispute and R.P. Sharma, G.J. Gerardi, to be published in Phys. Stat. Sol.

[3] L. Storasta, F.H.C. Carlsson, S.G. Sridhara, J.P. Bergman, A. Henry, T. Egilsson, A. Hallen, and E. Janzen, Appl. Phys. Lett. 18, 46 (2001).

[4] N.S. Saks, A.K. Agarwal, S. -H. Ryu, and J.W. Palmour, J. Appl. Phys. 90, 2796 (2001).

[5] L.B. Ruppalt, S. Stafford, D. Yuan, K.A. Jones, M.H. Ervin, K.W. Kirchner, T.S. Zheleva, M.C. Wood, B.R. Geil, E. Forsythe, R.D. Vispute, and T. Venkatesan, Solid State Electron, 47, 253 (2003).

DOI: https://doi.org/10.1016/s0038-1101(02)00203-4

[6] T. A. Kurtz, J.Q. Liu, H. J. Chung, and M. Skowronski, J. Appl. Phys., 92, 5863, (2002).