Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




M. K. Linnarsson et al., "Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 917-920, 2004

Online since:

June 2004





[1] Yu.A. Vodakov, G.A. Lokamina, E.N. Mokhov, and V.G. Oding: Sov. Phys. Solid State Vol. 19 (1977), p.1647.

[2] E.N. Mokov, E.E. Goncharov and G.G. Ryabova: Sov. Phys. Semicond. Vol. 18 (1984), p.27.

[3] E.N. Mokov, E.E. Goncharov and G.G. Ryabova: Sov. Phys Solid State. Vol. 30 (1988), p.140.

[4] Yu. A. Vodakov E.N. Mokov and V.G. Oding: Inorg. Mater. Vol. 19 (1984), p.979.

[5] M.K. Linnarsson, M.S. Janson, A. Schöner and B.G. Svensson: Mat. Res. Soc. Symp. Proc. Vol. 742, K6. 1 (2003).

[6] M.S. Janson, M.K. Linnarsson, A. Hallén et al.: Appl. Phys. Lett. Vol. 76 (2000), p.1434.

[7] M. Bockstedte, A. Mattausch and O. Pankratov: Mat. Sci. Forum Vol. 353-356 (2001), p.447.

[8] P.A. Stolk, H. -J. Grossman, D.J. Eaglesham et al: J. Appl. Phys. Vol. 81 (1997), p.6031.

[9] H. Bracht, N.A. Stolwijk, M. Laube and G. Pensl: Appl. Phys. Lett. Vol. 77 (2000), p.3188.

[10] M. Domeij, U. Zimmermann, D. Åberg et al: Mat. Sci. Forum Vol. 433-436 (2003), p.847.

[11] M. Gong, C.V. Reddy, C.D. Beling et al: Appl. Phys. Lett. Vol. 72 (1998), p.2739.

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