Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC


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Materials Science Forum (Volumes 457-460)

Edited by:

Roland Madar, Jean Camassel and Elisabeth Blanquet




K. A. Jones et al., "Activation of Implanted Al and Co-Implanted Al/C or Al/Si in 4H-SiC", Materials Science Forum, Vols. 457-460, pp. 929-932, 2004

Online since:

June 2004




[1] J.M. Bluet, J. Pernot, J. Camassei, S. Contreras, J.L. Robert, J.F. Michael, and T. Billon, J. Appl. Phys. 88, 1971 (2000).

[2] K.A. Jones, M.A. Derenge, M.H. Ervin, P.B. Shah, J.A. Freitas, R.D. Vispute and R.P. Sharma, G.J. Gerardi, to be published in Phys. Stat. Sol.

[3] J.H. Zhao, K. Tone, S.R. Weiner, M.A. Caleca, H. Du and S.P. Withrow, IEEE Electron Dev. Lett., 18, 375 (1997).

[4] T. Kimoto, A. Itoh, H. Matsunami, S. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, T. Gailbor, C. Peppermuller, and G. Pensl, Appl. Phys. Lett. 67, 2833 (1995).

DOI: 10.1063/1.114800

[5] L. Storasta, F.H.C. Carlsson, S.G. Sridhara, J.P. Bergman, A. Henry, T. Egilsson, A. Hallen, and E. Janzen, Appl. Phys. Lett. 18, 46 (2001).

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