Application of Grazing-Incidence Small-Angle X-Ray Scattering Technique to Semiconducting Composite Materials

Abstract:

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Grazing-incidence small-angle scattering (GI-SAXS) technique was applied to self-assembled Ge islands capped with Si. GI-SAXS has a merit over TEM and AFM that the structure of islands buried in a cap layer for stabilization can be evaluated nondestructively. By analyzing the scattering patterns, the size of Ge islands was estimated to be about 5 nm in height and 26 nm in diameter, with the islands density of 4.2×1014/m2. From the best fitting of two-dimensional model intensity to the experiments, the shape of the islands was deduced

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1097-1100

DOI:

10.4028/www.scientific.net/MSF.475-479.1097

Citation:

T. Ogawa et al., "Application of Grazing-Incidence Small-Angle X-Ray Scattering Technique to Semiconducting Composite Materials", Materials Science Forum, Vols. 475-479, pp. 1097-1100, 2005

Online since:

January 2005

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$35.00

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