Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation


Article Preview

SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (PO2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and PO2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and PO2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.



Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie




A. Ito et al., "Electrical Conductivity of SrRuO3 Thin Films Prepared by Laser Ablation", Materials Science Forum, Vols. 475-479, pp. 1209-1212, 2005

Online since:

January 2005




[1] P.B. Allen, H. Berger, O. Chauvet, L. Forro, T. Jarlborg, A. Junod, B. Revaz and G. Santi: Phys. Rev. Vol. B 53 (1996), p.4393.

DOI: https://doi.org/10.1103/physrevb.53.4393

[2] T. Morimoto, O. Hidaka, K. Yamakawa, O. Arisumi, H. Kanaya, T. Iwamoto, Y. Kumura, I. Kunishima and S. Tanaka: Jpn. J. Appl. Phys. Vol. 39 (2000), p.2110.

DOI: https://doi.org/10.1143/jjap.39.2110

[3] S.H. Oh and C. -G. Park: J. Korean Phys. Soc. Vol. 37 (2000), p.961.

[4] R. Ohara, T. Schimizu, K. Sano, M. Yoshiki and T. Kawakubo: Jpn. J. Appl. Phys. Vol. 40 (2001), p.1384.

[5] H. Funakubo, T. Oikawa, N. Higashi and K. Saito: J. Crystal Growth Vol. 235 (2002), p.401.

[6] K. Watanabe, M. Ami and M. Tanaka: Mater. Res. Bull. Vol. 32 (1997), p.83.

[7] M. Hiratani, C. Okazaki, K. Imagawa and K. Takagi: Jpn. J. Phys. Vol. 35 (1996), p.6212.

[8] H.J. Lewerenz, S. Stucki and R. Kötz: Surf. Sci. Vol. 126 (1983), p.463.

[9] P. Froment, M.J. Genet and M. Devillers: J. Electron. Spectrosc. Relat. Phenom. Vol. 104 (1999), p.119.

[10] P.A. Cox, J.B. Goodenough, P.J. TAVENER, D. Telles and R.G. Egdell: J. Solid State Chem. Vol. 62 (1986), p.360.

[11] Y.J. Kim, Y. Gao and S.A. Chambers: Appl. Surf. Sci. Vol. 120 (1997), p.250.

[12] H. Over, A.P. Seitsonen, E. Lundgren and M. Smedh and J.N. Andersen: Surf. Sci. Vol. 504 (2002), p. L196.