Preparation of Rutile and Anatase TiO2 Films by MOCVD
Titanium dioxide (TiO2) films were prepared on quartz substrates by using Ti(O-i-C3H7)2(dpm)2 and O2 gas. The crystal structure, morphology and deposition rate of TiO2 films were investigated by changing deposition temperatures (Tdep) from 700 to 1100 K and total pressures (Ptot) from 0.6 to 1.0 kPa. The structure changed mainly with deposition temperature. Rutile TiO2 films with (200) orientation and anatase TiO2 films with (004) orientation both in a single phase were obtained at Tdep = 873 K and 723 K, respectively. At Tdep > 873 K, the TiO2 films had a columnar microstructure consisting of mainly anatase and a small amount of rutile. At Tdep = 723 to 873 K, the TiO2 films were the mixture of non-oriented rutile and slightly (004) oriented anatase having dense and fine-grain microstructure. The deposition rate of TiO2 films increased with increasing Tdep showing the maximum of 30 µm h-1 at Tdep = 973 K and Ptot = 0.6 kPa.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
R. Tu and T. Goto, "Preparation of Rutile and Anatase TiO2 Films by MOCVD", Materials Science Forum, Vols. 475-479, pp. 1219-1222, 2005