Effect of Impurities on Vacancy Mobility in V-4Cr-4Ti
To investigate the effect of impurites, such as O, N and C, on migration behavior of vacancies in several types of V-4Cr-4Ti vanadium alloy with different amount of impurites from 207wppm to 866wppm were irradiated with 28 MeV electrons using an electron linear accelerator at 100 K. After irradiation, positron lifetime measurements were carried out. Single vacancies were produced in all samples. The vacancy clusters were formed at 348 K and 433 K in samples with lowest and highest impurites, respectively. The temperature forming vacancy clusters incresased with increaisng amount of impurites. The vacancy migaration is depended on the amount of impurities rather than the kind of impurity.
Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie
Q. Xu et al., "Effect of Impurities on Vacancy Mobility in V-4Cr-4Ti", Materials Science Forum, Vols. 475-479, pp. 1441-1444, 2005