Effect of Zn and Fe Concentrations on Structure and Optical Damage Resistances of Near Stoichiometric Zn:Fe:LiNbO3 Crystals


Article Preview

Zn,Fe co-doped near stoichiometric LiNbO3 crystals with variant Zn concentrations and with same Fe concentrations were grown by top-seeded-solution-growth (TSSG) method. The optical damage resistances of SLN crystals were studied by the method of transmittance facula distortion. The UV-Vis spectra showed that the grown undoping crystal had a composition very close to stoichiometric LiNbO3 crystal, and the absorption edges moved as the doping concentration changed. The optical damage experiments showed that, the crystal with 2mol% of Zn was with high resistance to optical damage, and the optical damage resistance was improved evidently as the Zn concentration increased further.



Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie




H. T. Li et al., "Effect of Zn and Fe Concentrations on Structure and Optical Damage Resistances of Near Stoichiometric Zn:Fe:LiNbO3 Crystals", Materials Science Forum, Vols. 475-479, pp. 1677-1680, 2005

Online since:

January 2005




[1] Kazuo Niwa, Yasunori Furukawa, Shunji Takekaka and Kenji Kitamura: J. Crystal Growth Vol. 208 (2000), p.493.

[2] O Thiemann, O.F. Schirmer: SPIE Vol. 1018 (1988), p.18.

[3] Y. Furukawa, K. Kitamura, Y. Ji, G. Montemezzani, M. Zgonik, C. Medrano, P. Gunter: Optics Letters Vol. 22 (1997), p.501.

DOI: https://doi.org/10.1364/ol.22.000501

[4] Yunping Yang, Karsten Buse, Demetri Psaltis: Optics Letters Vol. 27 (2002), p.158.

DOI: https://doi.org/10.1364/ol.27.000158

[5] E. Kraetzig, O.F. Schirmer: Topics in Applied Physics, Springer-Verlag, Berlin, Vol. 62 (1989), p.131.

[6] A. Ashkin, G.D. Boyd, J.M. Dziedzik, R.G. Smith, A.A. Ballman, K. Nassaau: Appl. Phys. Lett. Vol. 72 (1966), p.192.

[7] M.H. Li, Y.H. Xu, R. Wang, X.H. Zhen, C.Z. Zhao: Cryst. Res. Technol. Vol. 36 (2001), p.191.

[8] G. Zhong, J. Jian,Z. Wu: In proceedings of the 11th International Conference on Quantum Electronics, IEEE, New York, 1990, p.631.

[9] T.R. Volk, V.I. Pryalkin, N.M. Rubinina: Opt. Lett. Vol. 15 (1990), p.996.

[10] T.R. Volk, N.M. Rubinina: Ferroelect. Lett. Vol. 14 (1992), p.37.

[11] Y. Kong, J. Wen, H. Wang: Appl. Phys. Lett. Vol. 66 (1995), p.280.

[12] J.K. Yamanoto, K. Kitamura, N. Iyi, S. Kimura, Y. Furukawa, M. sato: Appl. Phys. Lett. Vol. 61 (1992) , p.2156.

[13] G.I. Malovichko, V.G. Grachev, L.P. Yurchemko, V.Y. Proshko, E.P. Kokanyan, V.T. Grbrielyan: Phys. Stat. Sol(a). Vol. 133 (1992), p.29.

[14] I.R. Herrington, B. Dischler, A. Rauber, J. Schneider: Solid State Comm. Vol. 12 (1973), p.351.

[15] X.H. Zhen, L.C. Zhao, Y.H. Xu: Appl. B. Vol. 52 (2003), p.1029.

Fetching data from Crossref.
This may take some time to load.