Growth of an Inx(OOH,S)y Buffer Layer and Its Application to Cu(In,Ga)(Se,S)2 Solar Cells


Article Preview

As an alternative to a CdS buffer layer for Cu(In,Ga)Se2-based solar cells, we prepared In-based buffer layers using a chemical bath deposition method. XPS and XRD analyses revealed that the In-based buffer layers contained In2S3 and InOOH phases. Compared with CdS film, the In-based film, Inx(OOH,S)y, had higher optical transmittance and a shorter absorption edge. The Cu(In,Ga)(Se,S)2 solar cell with the Inx(OOH,S)y buffer layer had better photovoltaic properties than that with a conventional CdS buffer layer. The conversion efficiency of the best Cu(In,Ga)(Se,S)2 solar cell with Inx(OOH,S)y buffer layer was 12.55 % for an active area of 0.19 cm2.



Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie




K. H. Kim et al., "Growth of an Inx(OOH,S)y Buffer Layer and Its Application to Cu(In,Ga)(Se,S)2 Solar Cells", Materials Science Forum, Vols. 475-479, pp. 1681-1684, 2005

Online since:

January 2005




[1] R. Bayon, C. Guillen, M.A. Martinez, M.T. Gutierrez and J. Herrero: J. Electrochem. Soc. Vol. 145 (8) (1998), p.2775.

[2] D. Hariskos, M. Ruckh, U. Ruhle, T. Walter, H.W. Schock, J. Hedstrom and L. Stolt: Sol. Energy Mater. Sol. Cells Vol. 41/42 (1996), p.345.


[3] K. Kushiya, M. Tachiyuki, Y. Nagoya, A. Fujimaki, B. Sang, D. Okumura, M. Satoh and O. Yamase: Sol. Energy Mater. Sol. Cells Vol. 67 (2001), p.11.


[4] S. Chaisitsak, A. Yamada and M. Konagai: Jpn. J. Appl. Phys. Vol. 41 (2002), p.507.

[5] Y. A. Jeon, K. S. No, J. S. Kim and Y. S. Kim: Met. Mater. -Int. Vol. 9 (2003), p.383.

[6] F. Moulder, W.F. Sticke, P.E. Sobol and K.D. Bomben: Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics, Inc., USA 1995).

[7] L. Larina, K. H. Kim, K. H. Yoon, M. Konagai and B.T. Ahn: J. Electrochem. Soc. Accepted 400 600 800 1000 1200 0. 0 0. 2 0. 4 0. 6 0. 8 1. 0 QE Wavelength (nm) Inx(OOH, S)y, ~ 60 nm CdS, ~ 50 nm.