Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells

Abstract:

Article Preview

According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear gain of the two QWs were calculated and discussed. Contrast the gain performance of GaAs/AlGaAs QW with that of AlyInxGa1-x-yAs/AlGaAs QW, it can be found that the strained AlyInxGa1-x-yAs/AlGaAs QW material has more promising optical gain than that of the GaAs/AlGaAs QW.

Info:

Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1685-1688

Citation:

H. Gai et al., "Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells", Materials Science Forum, Vols. 475-479, pp. 1685-1688, 2005

Online since:

January 2005

Export:

Price:

$38.00

[1] J.M. Zhang, L.H. Chen, X.Y. Ma: Chinese Journal Of semiconductors Vol. 13 (1992), pp.67-74.

[2] M.A. Emanuel, J.A. Skidmore, M. Jansen: IEEE Photo. Techno. Lett Vol. 9 (1997), pp.1451-1453.

[3] A. H. Moore, N. Holehouse, S. R. Lee: J. Cryst. Growth Vol. 124 (1992), pp.703-708.

[4] C.A. Wang, J.N. Walpole, L.J. Missaggia: Appl. Phys. Lett. Vol. 58 (1991), pp.2208-2210.

[5] J. Minch, S.H. Park, T. Keating: IEEE Journal of Quantum Electronics Vol. 35 (1999), pp.771-782.

[6] S.L. Chuang: Physics of Optoelectronic Devices (New York, Wiley 1995).

[7] S. Z . Peter: Quantum Well Lasers (Acdemic Press, Inc., Harcourt Brace Jovanovich, 1993) 2 3 4 5 6 7 8 9 10 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 GaAs/Al0. 2Ga0. 8As QW Al0. 12In0. 18Ga0. 7As/Al0. 2Ga0. 8As QW Peak Gain(/cm) Carrier Density(1018cm-3) Fig. 4. Maximum gain as a function of injected carrier density calculated for Al0. 12In0. 18Ga0. 7As/Al0. 2Ga0. 8As and GaAs/Al0. 2Ga0. 8As quantum well.

DOI: https://doi.org/10.1016/s0026-2692(96)00113-9