Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire


Article Preview

The morphology evolution of ZnO films grown on sapphire (0001) by MOCVD have been studied as a function of buffer growth time and temperature by means of atomic-force microscope (AFM), x-ray diffractions (XRD) and optical microscopy. When the buffer growth temperature decreased to 450°C, the surface became smooth greatly, indicating the transition from typical 3D island growth to quasi-2D growth mode. As the buffer growth time exceeds 5min, the micron-sized pit-like features are formed. It is due to the lack of stabilization of adatoms under the “etching” action of ionized O2/Ar during high temperature buffer annealing



Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie




J. D. Ye et al., "Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire", Materials Science Forum, Vols. 475-479, pp. 1693-1696, 2005

Online since:

January 2005




[1] T. Aoki, Y. Hatanaka, D.C. Look, Appl. Phys. Lett. 76, 3257 (2000).

[2] C.R. Miskys, M.K. Kelly, O. Ambacher, Appl. Phys. Lett. 77(12), 1858 (2000).

[3] K. Ogata, K. Maejima, S. Fujita, and S. Fujita, J. Crystal Growth 248, 25(2003).

[4] W. I. Park, S. J. An, G.C. Yi, and H.M. Jiang, J. Mater. Res. 16, 1358 (2002).

[5] J.D. Ye, S.L. Gu, S.M. Zhu, T. Chen, F. Qin, L.Q. Hu, R. Zhang, Y. Shi, and Y.D. Zheng, J. Crystal Growth 243, 151 (2002).

[6] A. Nahhas, H. K Kim, and J. Blachere, Appl. Phys. Lett. 78, 1511 (2001).

[7] Y. Chen, H.J. Ko, S.K. Hong, and T. Yao, Appl. Phys. Lett. 76, 559 (2000).

[8] H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwata, S. Niki, K. Nakahara, and H. Takasu, Appl. Phys. Lett. 84, 4412 (2004).


[9] K. Wang, D. Pavlidis, and J. Singh, J. Appl. Phys. 80, 1823 (1996).

[10] Y. Chen, H. Ko, S. Hong, T, Yao, and Y. Segawa, Appl. Phys. Lett. 80, 1358 (2002).