Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire

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The morphology evolution of ZnO films grown on sapphire (0001) by MOCVD have been studied as a function of buffer growth time and temperature by means of atomic-force microscope (AFM), x-ray diffractions (XRD) and optical microscopy. When the buffer growth temperature decreased to 450°C, the surface became smooth greatly, indicating the transition from typical 3D island growth to quasi-2D growth mode. As the buffer growth time exceeds 5min, the micron-sized pit-like features are formed. It is due to the lack of stabilization of adatoms under the “etching” action of ionized O2/Ar during high temperature buffer annealing

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Periodical:

Materials Science Forum (Volumes 475-479)

Main Theme:

Edited by:

Z.Y. Zhong, H. Saka, T.H. Kim, E.A. Holm, Y.F. Han and X.S. Xie

Pages:

1693-1696

Citation:

J. D. Ye et al., "Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire", Materials Science Forum, Vols. 475-479, pp. 1693-1696, 2005

Online since:

January 2005

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$38.00

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